HM4438 Datasheet, H&M Semiconductor

* VDS = 60V,ID =9A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

General Features
* VDS = 60V,ID =9A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ)
* High density cell design for ultra.

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 60V,ID =9A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ)
* High densi.